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参数资料
| 型号： | HMC619 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 3.38 X 2.05 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件页数： | 6/8页 |
| 文件大小： | 292K |
| 代理商： | HMC619 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number
Function
Description
Interface Schematic
1IN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2Vgg2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +5V should be applied to Vgg2.
3ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
OUT & Vdd
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6, 7
ACG3, ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8Vgg1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
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| HMC619_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz |
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