参数资料
型号: HMC636ST89E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN
文件页数: 2/6页
文件大小: 651K
代理商: HMC636ST89E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9
9 - 2
Output return Loss vs. Temperature
Broadband Gain & return Loss
Gain vs. Temperature
reverse isolation vs. Temperature
input return Loss vs. Temperature
noise Figure vs. Temperature
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT HiGH LinEAriTy
Gain Block, 0.2 - 4.0 GHz
-20
-15
-10
-5
0
5
10
15
20
0
1
2
3
4
5
6
S21
S11
S22
RESPONSE
(dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
0
1
2
3
4
+25C
+85C
-40C
G
A
IN
(d
B
)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1
2
3
4
+25C
+85C
-40C
R
E
T
U
R
N
LO
S
(d
B
)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1
2
3
4
+25C
+85C
-40C
R
E
T
U
R
N
LO
S
(d
B
)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1
2
3
4
+25C
+85C
-40C
R
E
V
E
R
S
E
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
+25C
+85C
-40C
N
O
IS
E
F
IG
U
R
E
(d
B
)
FREQUENCY (GHz)
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