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参数资料
| 型号： | HMC669LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件页数： | 3/10页 |
| 文件大小： | 741K |
| 代理商： | HMC669LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC669LP3 / 669LP3E
v04.0709
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
LNA - Gain vs. Temperature [1]
LNA - Broadband Gain & Return Loss
LNA - Return Loss vs. Temperature [1]
LNA - Gain vs. Temperature [2]
LNA - Noise Figure vs. Temperature [3]
10
12
14
16
18
20
22
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
+25C
+85C
-40C
FREQUENCY (GHz)
G
A
IN
(d
B
)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.8
1
1.2
1.4 1.6
1.8
2
2.2 2.4
2.6 2.8
3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
R
E
S
P
O
N
S
E
(d
B
)
S11
S21
S22
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE
FIGURE
(dB)
+85C
+25C
-40C
10
12
14
16
18
20
22
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
+25C
+85C
-40C
FREQUENCY (GHz)
G
A
IN
(d
B
)
LNA - Output IP3 vs.
Temperature, Output Power @ 0 dBm
14
18
22
26
30
34
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3
(dBm
)
Vdd=5V
Vdd=3V
[1] Vdd = 5V
[2] Vdd = 3V
[3] measurement reference plane shown on evaluation pCB drawing.
-30
-25
-20
-15
-10
-5
0
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
+25C
+85C
-40C
FREQUENCY (GHz)
R
E
T
U
R
N
LO
S
(d
B
)
Input Return Loss
Output Return Loss
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| HMC695LP4 | 2850 MHz - 3300 MHz RF/MICROWAVE FREQUENCY QUADRUPLER |
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参数描述 |
|---|---|
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| HMC672LC3C | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:14 Gbps, AND / NAND / OR / NOR Gate |
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