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参数资料
| 型号： | HMC669LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件页数： | 7/10页 |
| 文件大小： | 741K |
| 代理商： | HMC669LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7 - 6
Typical Supply Current vs. Vdd
rbias
idd (mA)
Vdd= 3V
Vdd= 5V
0
55
95
15
49
86
47
41
73
180 [1]
28
50
[1] recommended maximum rbias
Drain Bias Voltage (Vdd)
+6 Vdc
Control Voltage (Vctl)
+6 Vdc
rf input power
(rfiN)
lNA mode
Bypass / fail safe mode
+5 dBm
+20 dBm
Channel Temperature
150 °C
Continuous pdiss (T = 85 °C)
(derate 10.71 mw/°C above 85 °C)
0.70 w
Thermal resistance
(channel to ground paddle)
93.33 °C/w
storage Temperature
-65 to +150° C
operating Temperature
-40 to +85° C
esD sensitivity (HBm)
Class 1A
Absolute Maximum Ratings
lNA mode
Vctl = Vdd = 3 to 5V
Bypass mode
Vctl= 0V, Vdd = 3 to 5V
failsafe mode
Vctl = Vdd = N/C
Truth Table
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
HMC669LP3 / 669LP3E
v04.0709
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
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