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参数资料
| 型号： | HMC681LP5 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, LEADLESS, PLASTIC, SMT, QFN-32 |
| 文件页数： | 8/10页 |
| 文件大小： | 818K |
| 代理商： | HMC681LP5 |
12 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Outline Drawing
nOtes:
1. leadframe material: COpper allOY
2. dimensiOns are in inCHes [millimeters]
3. lead spaCing tOleranCe is nOn-CUmUlatiVe.
4. pad bUrr lengtH sHall be 0.15mm maXimUm.
pad bUrr HeigHt sHall be 0.05mm maXimUm.
5. paCKage Warp sHall nOt eXCeed 0.05mm.
6. all grOUnd leads and grOUnd paddle mUst be
sOldered tO pCb rf grOUnd.
7. refer tO Hittite appliCatiOn nOte fOr sUggested
land pattern.
part number
package body material
lead finish
msl rating
package marking [3]
HmC681lp5
low stress injection molded plastic
sn/pb solder
msl1
[1]
H681
XXXX
HmC681lp5e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
H681
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-digit lot number XXXX
Package Information
Absolute Maximum Ratings
eleCtrOstatiC sensitiVe deViCe
ObserVe Handling preCaUtiOns
Bias Voltage
Vdd (V)
idd (typ.) (ma)
+5
5
Vs (V)
is
1 (ma)
is
2 (ma)
+5
88
HMC681LP5 / 681LP5E
v03.1010
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE
GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz
rf input power [1] (at max gain
setting)
-10.5 dbm (t = +85 °C)
digital inputs (reset, shift Clock,
latch enable & serial input)
-0.5 to Vdd +0.5V
bias Voltage (Vdd)
5.5V
Collector bias Voltage (Vcc)
5.5V
Channel/Junction temperature
150 °C
Continuous pdiss (t = 85 °C)
(derate 19.8 mW/°C above 85 °C) [1]
1.29 W
thermal resistance
50.8 °C/W
storage temperature
-65 to +150 °C
Operating temperature
-40 to +85 °C
[1] the max rf input power rating will increase by 0.5 db for
every 0.5 db reduction in gain to a maximum rf input power of
10 dbm.
Control Voltage Table
state
Vdd = +3V
Vdd = +5V
low
0 to 0.5V @ <1 a
0 to 0.8V @ <1 a
High
2 to 3V @ <1 a
2 to 5V @ <1 a
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