参数资料
型号: HMC694LP4E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 6000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN
文件页数: 1/8页
文件大小: 475K
代理商: HMC694LP4E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC694LP4 / 694LP4E
v02.1108
Functional Diagram
The HmC694lp4(e) is a gaas mmiC pHemT analog
variable gain amplifier which operates between 6 and
17 gHz. ideal for microwave radio applications, the
amplifier provides up to 22 db of gain, output p1 db
of up to +22 dbm, and up to +30 dbm of output ip3
at maximum gain, while requiring only 175 ma from
a +5V supply. a gate bias pin (Vctrl) is provided to
allow variable gain control up to 23 db. gain flatness
is excellent making the HmC694lp4e ideal for eW,
eCm and radar applications. The HmC694lp4e is
housed in a roHs compliant 4x4 mm Qfn leadless
package and is compatible with high volume surface
mount manufacturing.
Typical Applications
Features
General Description
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
The HmC694lp4(e) is ideal for:
point-to-point radio
point-to-multi-point radio
eW & eCm
X-band radar
Test equipment
Wide gain Control range: 23 db
single Control Voltage
Output ip3 @ max gain: +30 dbm
Output p1db: +22 dbm
no external matching
24 lead 4x4 mm smT package: 16 mm2
Electrical Specifications, T
A = +25°C, Vdd1, 2, 3= 5V, Vctrl= -2V, Idd= 170 mA*
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
6 - 10
10 - 17
gHz
gain
19
22
14
18
db
gain flatness
±1
±1.5
db
gain Variation Over Temperature
0.015
db/ °C
gain Control range
23
20
db
noise figure
6
7.5
6
6.5
db
input return loss
15
8
db
Output return loss
10
8
db
Output power for 1 db Compression (p1db)
19
21
22
dbm
saturated Output power (psat)
22
23
dbm
Output Third Order intercept (ip3)
30
dbm
Total supply Current (idd)
175
ma
*set Vctrl = -2V and then adjust Vgg1, 2 between -2V to 0V (typ. -0.8V) to achieve idd = 170ma typical.
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