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参数资料
| 型号： | HMC716LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 3100 MHz - 3900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件页数： | 7/10页 |
| 文件大小： | 728K |
| 代理商： | HMC716LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7 - 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5V
rf input power (rfiN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 11.1 mw/°C above 85 °C)
0.72 w
Thermal resistance
(channel to ground paddle)
90 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
esD sensitivity (HBm)
Class 1A
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Vdd (V)
idd (mA)
2.7
31
3.0
41
3.3
51
4.5
51
5.0
65
5.5
80
Note: Amplifier will operate over full voltage ranges shown above.
Typical Supply Current vs. Supply Voltage
(Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V)
Vdd (V)
rbias (Ω)
idd (mA)
min
max
recommended
3V
2k [1]
open Circuit
2.2k
20
5.6k
30
47k
41
5V
0
open Circuit
270
48
820
65
2.2k
81
[1] with Vdd= 3V and rbias < 2k
Ω may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC716LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC716LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC717ALP3E | 功能描述:LNA W/ ADJ BIAS, 4.9 TO 6.0GHZ 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:在售 频率:4.8GHz ~ 6GHz P1dB:18dBm 增益:14.5dB 噪声系数:1.1dB RF 类型:LTE，WiMax 电压 - 电源:3V 电流 - 电源:68mA 测试频率:4.8GHz ~ 6GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-QFN（3x3） 标准包装:1 |
| HMC717ALP3ETR | 功能描述:IC MMIC AMP PHEMT LN 16QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:4.8GHz ~ 6GHz P1dB:18.5dBm 增益:16.5dB 噪声系数:1.25dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:73mA 测试频率:4.8GHz ~ 6GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-QFN（3x3） 标准包装:1 |
| HMC717LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz |
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