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参数资料
| 型号： | HMC716LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 3100 MHz - 3900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-16 |
| 文件页数： | 1/10页 |
| 文件大小： | 728K |
| 代理商： | HMC716LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
v02.1009
General Description
Features
Functional Diagram
The HmC716lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for fixed wireless
and lTe/wimAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC716lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Noise figure: 1 dB
Gain: 18 dB
output ip3: +33 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC716lp3(e) is ideal for:
fixed wireless and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
Access points
Electrical Specifications
T
A = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V
[1]
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
frequency range
3.1 - 3.9
mHz
Gain
13
17
15.5
18
dB
Gain Variation over Temperature
0.01
dB/ °C
Noise figure
1
1.3
1
1.3
dB
input return loss
25
30
dB
output return loss
13
16
dB
output power for 1 dB Compression (p1dB)
12
15
16
19
dBm
saturated output power (psat)
16.5
20.5
dBm
output Third order intercept (ip3)
26
33
dBm
supply Current (idd)
41
55
65
90
mA
[1] rbias resistor sets current, see application circuit herein
相关PDF资料 |
PDF描述 |
|---|---|
| HMC716LP3 | 3100 MHz - 3900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC717LP3E | 4800 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC717LP3 | 4800 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC718LP4E | 600 MHz - 1400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC718LP4 | 600 MHz - 1400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC716LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC717ALP3E | 功能描述:LNA W/ ADJ BIAS, 4.9 TO 6.0GHZ 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:在售 频率:4.8GHz ~ 6GHz P1dB:18dBm 增益:14.5dB 噪声系数:1.1dB RF 类型:LTE，WiMax 电压 - 电源:3V 电流 - 电源:68mA 测试频率:4.8GHz ~ 6GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-QFN（3x3） 标准包装:1 |
| HMC717ALP3ETR | 功能描述:IC MMIC AMP PHEMT LN 16QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 频率:4.8GHz ~ 6GHz P1dB:18.5dBm 增益:16.5dB 噪声系数:1.25dB RF 类型:LTE，WiMax 电压 - 电源:3 V ~ 5 V 电流 - 电源:73mA 测试频率:4.8GHz ~ 6GHz 封装/外壳:16-VFQFN 裸露焊盘 供应商器件封装:16-QFN（3x3） 标准包装:1 |
| HMC717LP3 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz |
| HMC717LP3E | 制造商:Hittite Microwave Corp 功能描述:RF AMP LOW NOISE 6GHZ 16QFN |
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