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参数资料
| 型号： | HMC754S8GE |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, SOIC-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 1057K |
| 代理商： | HMC754S8GE |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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General Description
Functional Diagram
The Hmc754s8Ge is a GaAs/inGap HBT Dual
channel Gain Block mmic smT amplifier covering
Dc to 1 GHz. This versatile product contains two
gain blocks, packaged in a single 8 lead plastic
soic-8, for use with both amplifiers combined in
push-pull configuration using external baluns to cancel
out second order non-linearities and improve ip2
performance. in this configuration, the Hmc754s8Ge
offers high gain, very low distortion & simple external
matching. This high linearity amplifier consumes only
160mA from a single positive supply.
output ip2: +78 dBm
High Gain: 14.5 dB
High output ip3: +38 dBm
75 ohm impedance
single positive supply: +5v
robust 1000v esD, class 1c
soic-8 smT package
Typical Applications
The Hmc754s8Ge is ideal for:
cATv / Broadband infrastructure
Test & measurement equipment
line Amps and fiber nodes
customer premise equipment
Electrical Specifications, T
A = +25° C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm
[1]
parameter
min.
Typ.
max.
Units
Gain
0.05 - 0.5 GHz
0.5 - 0.87 GHz
0.87 - 1.0 GHz
13.5
12.7
12.1
14.7
14.2
13.4
dB
Gain variation over Temperature
0.05 - 0.87 GHz
0.008
dB/ °c
input return loss
0.05 - 0.5 GHz
0.5 - 0.87 GHz
17
10
dB
output return loss
0.05 - 0.5 GHz
0.5 - 0.87 GHz
10
20
dB
reverse isolation
0.05 - 0.87 GHz
23
dB
output power for 1 dB compression (p1dB)
0.05 - 0.87 GHz
19.5
21
dBm
output Third order intercept point (ip3)
(pout= 0 dBm per tone, 1 mHz spacing)
0.05 - 0.87 GHz
38
dBm
output second order intercept point (ip2)
0.05 - 0.5 GHz
78
dBm
composite second order (cso) [2]
0.05 - 0.87 GHz
-81
dBc
composite Triple Beat (cTB) [2]
0.05 - 0.87 GHz
-75
dBc
cross modulation (XmoD) [2]
0.05 - 0.87 GHz
-67
dBc
noise figure
0.05 - 0.5 GHz
0.05 - 0.87 GHz
5.5
6.5
dB
supply current (icc1 + icc2)
145
160
175
mA
[1] Data taken with dual amplifiers combined in push-pull (default) configuration
[2] input level +15 dBmv, 133 channels - with analog modulation
Features
HMC754S8GE
GaAs HBT HIGH LINEARITY
PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz
v00.0409
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相关代理商/技术参数 |
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|---|---|
| HMC754S8GE_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz |
| HMC754S8GETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC P-P 2CH HBT 8SOIC |
| HMC755LP4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz |
| HMC755LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP 2W WIMAX 24-QFN |
| HMC755LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz |
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