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参数资料
| 型号： | HMC757LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 16000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 841K |
| 代理商： | HMC757LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC757LP4E
v00.0610
General Description
Features
Functional Diagram
The HmC757lp4e is a three stage GaAs pHemT
mmiC 1 watt power Amplifier which operates be-
tween 16 and 24 GHz. The HmC757lp4e provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% pAe from a +5V supply. The rf i/os
are DC blocked and matched to 50 ohms. The 4x4
mm plastic package eliminates the need for wirebon-
dig, and is compatible with surface mount manufactur-
ing techniques.
saturated output power: 27.5 dBm @ 21% pAe
High output ip3: 34.5 dBm
High Gain: 20.5 dB
DC supply: +5V @ 400 mA
no external matching required
24 lead 4x4 mm smT package: 16 mm
Electrical Specifications, T
A = +25° C, Vdd = +5V, Idd = 400mA
[1]
Typical Applications
The HmC757lp4e is ideal for:
point-to-point radios
point-to-multi-point radios
VsAT
military & space
parameter
min.
Typ.
max.
Units
frequency range
16 - 24
GHz
Gain
18.5
20.5
dB
Gain Variation over Temperature
0.028
dB/ °C
input return loss
11
dB
output return loss
12
dB
output power for 1 dB Compression (p1dB)
24.5
26.5
dBm
saturated output power (psat)
27.5
dBm
output Third order intercept (ip3)[2]
34.5
dBm
Total supply Current (idd)
400
mA
[1] Adjust Vgg between -2 to 0V to achieve idd = 400 mA typical.
[2] measurement taken at pout / Tone = +16 dBm
GaAs pHEMT MMIC WATT
POWER AMPLIFIER, 16 - 24 GHz
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