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参数资料
| 型号： | HMC757LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 16000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 841K |
| 代理商： | HMC757LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC757LP4E
v00.0610
GaAs pHEMT MMIC WATT
POWER AMPLIFIER, 16 - 24 GHz
Pin Descriptions
Application Circuit
pin number
function
Description
interface schematic
1, 2, 4 - 7,
12 - 15, 17 - 19, 24
GnD
These pins and package bottom must be
connected to rf/DC ground.
3
rfin
This pin is AC coupled
and matched to 50 ohms.
8 - 11, 20, 22
n/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
rf/DC ground externally.
16
rfoUT
This pin is AC coupled
and matched to 50 ohms.
21
Vdd
Drain bias for amplifier. external bypass caps 100pf, 0.1uf
and 4.7uf are required
23
Vgg
Gate control for pA. Adjust Vgg to achieve recommended
bias current. external bypass caps 100pf, 0.1uf and 4.7uf
are required.
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