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参数资料
| 型号： | HMC784MS8GE |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC MMIC GAAS SW SPDT 8MSOP |
| 标准包装： | 1 |
| RF 型： | 通用 |
| 频率： | 0Hz ~ 4GHz |
| 特点： | SPDT |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP |
| 包装： | 标准包装 |
| 其它名称： | 1127-1069-6 |
HMC784MS8GE
11
Typical Applications
The HMC784MS8GE is ideal for:
? Cellular / 4G Infrastructure
? WiMAX, WiBro & Fixed Wireless
? Automotive Telematics
? Mobile Radio
? Test Equipment
Functional Diagram
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm 2
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
Electrical Specifi cations,
T A = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated) , 50 Ohm System
Insertion Loss
Isolation
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 4.0 GHz
Min.
26
Typ.
0.4
0.6
0.8
0.9
1.3
30
Max.
0.6
0.8
1.1
1.3
2.0
Units
dB
dB
dB
dB
dB
dB
DC - 1.0 GHz
35
dB
Return Loss (On State)
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
Vdd = +3V
30
20
10
32
dB
dB
dB
dBm
Input Power for 0.1dB Compression
Vdd = +5V
Vdd = +8V
Vdd = +3V
0.1 - 4.0 GHz
32
37
38
35
dBm
dBm
dBm
Input Power for 1dB Compression
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
35
38
38
41
dBm
dBm
0.02 - 0.1 GHz
42
dBm
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
62
61
60
dBm
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
15
40
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
11 - 224
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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相关代理商/技术参数 |
参数描述 |
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| HMC784MS8GETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC GAAS SW SPDT 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC784 Series DC - 4.0 GHz GaAs MMIC 10 Watt T/R Switch - MSOP-8EP 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC784 Series DC - 4.0 GHz GaAs MMIC 10 Watt T/R Switch - MSOP-8EP |
| HMC785LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC MIXER W/LO AMP 24-QFN |
| HMC785LP4ETR | 功能描述:IC MMIC MIXER W/LO AMP 24-QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 RF 类型:LTE，WiMax 频率:1.7GHz ~ 2.2GHz 混频器数:1 增益:- 噪声系数:8dB 辅助属性:降频变频器 电流 - 电源:160mA 电压 - 电源:4.75 V ~ 5.25 V 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
| HMC786LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC MIXER W/LO AMP 24-QFN |
| HMC786LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1100 MHz |
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