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| 型号： | HMC902LP3E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC AMP MMIC GAAS LN 16QFN |
| 标准包装： | 1 |
| 频率： | 5GHz ~ 10GHz |
| P1dB： | 16dBm |
| 增益： | 19.5dB |
| 噪音数据： | 1.8dB |
| RF 型： | 通用 |
| 电源电压： | 3.5V |
| 电流 - 电源： | 110mA |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1074-6 |
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
7
Typical Applications
This HmC902lp3e is ideal for:
? point-to-point radios
? point-to-multi-point radios
? military & space
? Test instrumentation
Functional Diagram
Features
low Noise figure: 1.8 dB
High Gain: 19 dB
High p1dB output power: 16 dBm
single supply: +3.5 V @ 80 mA
output ip3: +28 dBm
50 ohm matched input/output
16 lead 3x3mm smT package: 9mm2
General Description
The HmC902lp3e is a GaAs mmiC low Noise
Amplifier housed in a leadless 3x3 mm plastic sur-
face mount package. The amplifier operates between
5 and 10 GHz, providing 19 dB of small signal
gain, 1.8 dB noise figure, and output ip3 of +28 dBm,
while requiring only 80 mA from a +3.5V supply. The
p1dB output power of +16 dBm enables the lNA to
function as a lo driver for balanced, i/Q or image
reject mixers. The HmC902lp3e also features
i/os that are DC blocked and internally matched to
50 ohms, making it ideal for high capacity microwave
radios and C-Band VsAT applications.
Electrical Specifications , T A = +25° C, Vdd 1 = Vdd2 = +3.5V, Idd = 80 mA [2]
frequency range
parameter
min.
Typ.
5 - 10
max.
Units
GHz
Gain
[1]
17
19.5
dB
Gain Variation over Temperature
0.01
dB / °C
Noise figure [1]
input return loss
output return loss
output power for 1 dB Compression [1]
saturated output power (psat) [1]
output Third order intercept (ip3)
supply Current (idd)
(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.)
1.8
12
15
16
17.5
28
80
2.2
110
dB
dB
dB
dBm
dBm
dBm
mA
[1] Board loss removed from gain, power and noise figure measurement.
[2] Vgg1 = Vgg2 = open for normal, self-biased operation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
7-1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC902LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
| HMC902-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 10GHz P1dB:16dBm 增益:20dB 噪声系数:1.6dB RF 类型:通用 电压 - 电源:3.5V 电流 - 电源:80mA 测试频率:5GHz ~ 10GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC903 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz |
| HMC903LP3E | 功能描述:IC AMP MMIC GAAS LN 16QFN RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC903LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
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