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参数资料
| 型号： | HMC902LP3E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IC AMP MMIC GAAS LN 16QFN |
| 标准包装： | 1 |
| 频率： | 5GHz ~ 10GHz |
| P1dB： | 16dBm |
| 增益： | 19.5dB |
| 噪音数据： | 1.8dB |
| RF 型： | 通用 |
| 电源电压： | 3.5V |
| 电流 - 电源： | 110mA |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1074-6 |
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Current vs. Input Power @ 7 GHz
Absolute Maximum Ratings
7
88
86
84
82
80
Drain Bias Voltage
rf input power
Gate Bias Voltage, Vgg1
Gate Bias Voltage, Vgg2
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 7 mw/°C above 85 °C)
Thermal resistance
(Channel to ground paddle)
+4.5V
+10 dBm
-0.8V to +0.2V
-0.8V to +0.2V
150 °C
0.45 w
143.8 °C/w
78
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
3
storage Temperature
operating Temperature
-65 to +150 °C
-40 to +85 °C
INPUT POWER (dBm)
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Outline Drawing
NoTes:
1. pACKAGe BoDY mATeriAl: low sTress iNJeCTioN molDeD
plAsTiC siliCA AND siliCoN impreGNATeD.
2. leAD AND GroUND pADDle mATeriAl: Copper AlloY.
3. leAD AND GroUND pADDle plATiNG: 100% mATTe TiN
4. DimeNsioNs Are iN iNCHes [millimeTers].
5. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.
6. pAD BUrr leNGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll
Be 0.05mm mAX.
7. pACKAGe wArp sHAll NoT eXCeeD 0.05mm
8. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To
pCB rf GroUND.
9. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD pCB lAND
pATTerN.
Package Information
part Number
package Body material
lead finish
package marking [1]
HmC902lp3e
roHs-compliant low stress injection molded plastic
100% matte sn
[2]
902
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC902LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
| HMC902-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 10GHz P1dB:16dBm 增益:20dB 噪声系数:1.6dB RF 类型:通用 电压 - 电源:3.5V 电流 - 电源:80mA 测试频率:5GHz ~ 10GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC903 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz |
| HMC903LP3E | 功能描述:IC AMP MMIC GAAS LN 16QFN RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC903LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
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