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参数资料
| 型号： | HMC797LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32 |
| 文件页数： | 1/10页 |
| 文件大小： | 786K |
| 代理商： | HMC797LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC797LP5E
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
v01.1010
General Description
Features
Functional Diagram
The HmC797lp5e is a GaAs mmiC pHemT Distrib-
uted power Amplifier which operates between DC
and 22 GHz. The amplifier provides 13.5 dB of gain,
39 dBm output ip3 and +28 dBm of output power at
1 dB gain compression while requiring 400 mA from
a +10 V supply. This versatile pA exhibits a positive
gain slope from DC to 22 GHz making it ideal for ew,
eCm, radar and test equipment applications. The
HmC797lp5e amplifier i/os are internally matched to
50 ohms facilitating integration into mutli-Chip-mod-
ules (mCms) and is packaged in a leadless Qfn 5x5
mm surface mount package, and requires no external
matching components.
High p1dB output power: 28 dBm
High psat output power: 29.5 dBm
High Gain: 13.5 dB
High output ip3: 39 dBm
supply Voltage: +10 V @ 400 mA
50 ohm matched input/output
32 lead 5x5 mm smT package: 25 mm
Typical Applications
The HmC797lp5e is ideal for:
Test Instrumentation
Microwave Radio & VSAT
Military & Space
Telecom Infrastructure
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
DC - 12
12 - 18
18 - 22
GHz
Gain
11
12.5
11
13.5
11
13.5
dB
Gain flatness
±0.7
±0.5
dB
Gain Variation over Temperature
0.012
0.008
dB/ °C
input return loss
13
15
dB
output return loss
12
16
13
dB
output power for 1 dB Compression (p1dB)
26
28
25
27
23.5
25.5
dBm
saturated output power (psat)
29.5
29
27
dBm
output Third order intercept (ip3)
39
37
35
dBm
noise figure
3.5
4
6
dB
supply Current
(idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
440
400
440
400
440
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC797-SX | 功能描述:RF Amplifier IC General Purpose 0Hz ~ 22GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:生命周期结束 频率:0Hz ~ 22GHz P1dB:28.5dBm 增益:14.5dB 噪声系数:3dB RF 类型:通用 电压 - 电源:10V 电流 - 电源:400mA 测试频率:- 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC798LC4 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz |
| HMC798LC4_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz |
| HMC798LC4_1007 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz |
| HMC798LC4TR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC MIXER SUB-HARM 24SMD |
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