参数资料
型号: HMC814
厂商: HITTITE MICROWAVE CORP
元件分类: 倍频器
英文描述: 6500 MHz - 12300 MHz RF/MICROWAVE FREQUENCY DOUBLER
封装: 1.23 X 1.20 MM, 0.10 MM HEIGHT, DIE-4
文件页数: 1/6页
文件大小: 355K
代理商: HMC814
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC814
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
v00.1109
General Description
Features
Functional Diagram
Electrical Specifications, T
A = +25 °C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level
Typical Applications
The HMc814 is ideal for:
clock Generation Applications:
SOnET Oc-192 & SDH STM-64
Point-to-Point & vSAT Radios
Test Instrumentation
Military & Space
Sensors
The HMc814 is a x2 active broadband frequency
multiplier chip utilizing GaAs PHEMT technology.
When driven by a +4 dBm signal, the multiplier
provides +17 dBm typical output power from 13 to
24.6 GHz. The Fo, 3Fo and 4Fo isolations are >20
dBc at 19 GHz. The HMc814 is ideal for use in LO
multiplier chains for Pt-to-Pt & vSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase noise of -136 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. All data is taken with the chip connected
via two 0.025mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout = 19 GHz
100 kHz SSB Phase noise: -136 dBc/Hz
Single Supply: +5v @ 88mA
Die Size: 1.2 x 1.23 x 0.1 mm
Parameter
Min.
Typ.
Max.
Units
Frequency Range, Input
6.5 - 12.3
GHz
Frequency Range, Output
13.0 - 24.6
GHz
Output Power
14
17
dBm
Fo Isolation (with respect to output level)
25
dBc
3Fo Isolation (with respect to output level)
25
dBc
Input Return Loss
7
dB
Output Return Loss
7
dB
SSB Phase noise (100 kHz Offset @ Input Frequency = 19 GHz)
-136
dBc/Hz
Supply current (Idd1 & Idd2)
70
88
100
mA
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