参数资料
型号: HMC903
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 1.33 X 1.08 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SMT, GP-2, 6 PIN
文件页数: 1/6页
文件大小: 671K
代理商: HMC903
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 18 GHz
v00.0310
General Description
Features
Functional Diagram
low Noise figure: 1.6 dB
High Gain: 19 dB
p1dB output power: 16 dBm
single supply Voltage: +3.5 V @ 90 mA
output ip3: 27 dBm
50 ohm matched input/output
Die size: 1.33 x 1.08 x 0.1 mm
Electrical Specifications
, T
A = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 90 mA
[1]
Typical Applications
This HmC903 is ideal for:
point-to-point radios
point-to-multi-point radios
military & space
Test instrumentation
The HmC903 is a self-biased GaAs mmiC low
Noise Amplifier which operates between 6 and 18
GHz. This lNA provides 19 dB of small signal gain,
1.6 dB noise figure, and output ip3 of 27 dBm, while
requiring only 90 mA from a +3.5 V supply. The p1dB
output power of 16 dBm enables the lNA to function
as a lo driver for balanced, i/Q or image reject
mixers. The HmC903 also features i/os that are DC
blocked and internally matched to 50 ohms for ease
of integration into multi-chip-modules (mCms). All
data is taken with the chip in a 50 ohm test fixture
connected via 0.025 mm (1 mil) diameter with bonds
of 0.31 mm (12 mils) length.
HMC903
parameter
min.
Typ.
max.
Units
frequency range
6 - 18
GHz
Gain
17
19
dB
Gain Variation over Temperature
0.013
dB / °C
Noise figure
1.6
2.1
dB
input return loss
11
dB
output return loss
13
dB
output power for 1 dB Compression
16
dBm
saturated output power (psat)
18
dBm
output Third order intercept (ip3)
27
dBm
supply Current (idd)
(Vdd = 3.5V, Vgg1 = Vgg2 = open)
90
mA
[1] Vgg1 = Vgg2 = open for normal, self-biased operation
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