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参数资料
| 型号： | HMC903 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.33 X 1.08 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SMT, GP-2, 6 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 671K |
| 代理商： | HMC903 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 4
Outline Drawing
Absolute Maximum Ratings
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Drain Bias Voltage
+4.5V
rf input power
+10 dBm
Gate Bias Voltage, Vgg1
-0.8V to +0.2V
Gate Bias Voltage, Vgg2
-0.8V to +0.2V
Channel Temperature
175 °C
Continuous pdiss (T = 85 °C)
(derate 6.9 mw/°C above 85 °C)
0.62 w
Thermal resistance
(Channel to die bottom)
144.8 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-55 to +85 °C
HMC903
v00.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 18 GHz
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
NoTes:
1. All DimeNsioNs iN iNCHes [millimeTers]
2. Die THiCKNess is 0.004 (0.100)
3. TYpiCAl BoND pAD is 0.004 (0.100) sQUAre
4. BoND pAD meTAliZATioN: GolD
5. BACKsiDe meTAlliZATioN: GolD
6. BACKsiDe meTAl is GroUND
7. No CoNNeCTioN reQUireD for UNlABeleD BoND pADs
8. oVerAll Die siZe is ±.002
Die Packaging Information [1]
standard
Alternate
Gp-2 (Gel pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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