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参数资料
| 型号： | HMC863LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 22000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 788K |
| 代理商： | HMC863LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9 - 6
HMC863LP4E
v02.0111
GaAs pHEMT MMIC WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Outline Drawing
noTes:
1. pACKAGe BoDY mATeriAl: AlUminA
2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinCHes GolD oVer
50 miCroinCHes minimUm niCKel.
3. Dimensions Are in inCHes [millimeTers].
4. leAD spACinG TolerAnCe is non-CUmUlATiVe
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm DATUm -C-
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD
To pCB rf GroUnD.
7. ClAssifieD As moisTUre sensiTiViTY leVel (msl) 1.
part number
package Body material
lead finish
msl rating
package marking [1]
HmC863lp4e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
H863
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °C
Package Information
pin number
function
Description
interface schematic
1, 2, 4 - 7, 12 -
15, 17 - 19, 24
package Bottom
GnD
Ground pins and package bottom must be connected to
rf/DC ground.
3
rfin
This pin is AC coupled and matched to 50 ohms.
8 - 11
n/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
rf/DC ground externally.
16
rfoUT
This pin is AC coupled and matched to 50 ohms.
20
Vd
Drain bias for amplifier. external 100 pf, 0.1 f and 4.7 f
bypass capacitors are required.
23
Vg
Gate control for pA. Adjust Vg to achieve recommended
bias current. external 100 pf, 0.1 f and 4.7 f bypass
capacitors are required.
Pin Descriptions
相关PDF资料 |
PDF描述 |
|---|---|
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| HMC903 | 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC907LP5E | 200 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC863LP4E_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC ? WATT POWER AMPLIFIER, 22 - 26.5 GHz |
| HMC864 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz |
| HMC864_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz |
| HMC864_1007 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz |
| HMC865LC3 | 制造商:Hittite Microwave Corp 功能描述:IC RF LIMITING AMP ETHERNET |
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