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参数资料
| 型号： | HMC902LP3E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 5000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT-16 |
| 文件页数： | 1/8页 |
| 文件大小： | 687K |
| 代理商： | HMC902LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
v01.0310
General Description
Features
Functional Diagram
low Noise figure: 1.8 dB
High Gain: 19 dB
High p1dB output power: 16 dBm
single supply: +3.5 V @ 80 mA
output ip3: +28 dBm
50 ohm matched input/output
16 lead 3x3mm smT package: 9mm
Electrical Specifications
, T
A = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA
[2]
Typical Applications
This HmC902lp3e is ideal for:
point-to-point radios
point-to-multi-point radios
military & space
Test instrumentation
The HmC902lp3e is a GaAs mmiC low Noise
Amplifier housed in a leadless 3x3 mm plastic sur-
face mount package. The amplifier operates between
5 and 10 GHz, providing 19 dB of small signal
gain, 1.8 dB noise figure, and output ip3 of +28 dBm,
while requiring only 80 mA from a +3.5V supply. The
p1dB output power of +16 dBm enables the lNA to
function as a lo driver for balanced, i/Q or image
reject mixers. The HmC902lp3e also features
i/os that are DC blocked and internally matched to
50 ohms, making it ideal for high capacity microwave
radios and C-Band VsAT applications.
HMC902LP3E
parameter
min.
Typ.
max.
Units
frequency range
5 - 10
GHz
Gain [1]
17
19.5
dB
Gain Variation over Temperature
0.01
dB / °C
Noise figure [1]
1.8
2.2
dB
input return loss
12
dB
output return loss
15
dB
output power for 1 dB Compression [1]
16
dBm
saturated output power (psat) [1]
17.5
dBm
output Third order intercept (ip3)
28
dBm
supply Current (idd)
(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.)
80
110
mA
[1] Board loss removed from gain, power and noise figure measurement.
[2] Vgg1 = Vgg2 = open for normal, self-biased operation.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC902LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
| HMC902-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:5GHz ~ 10GHz P1dB:16dBm 增益:20dB 噪声系数:1.6dB RF 类型:通用 电压 - 电源:3.5V 电流 - 电源:80mA 测试频率:5GHz ~ 10GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC903 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz |
| HMC903LP3E | 功能描述:IC AMP MMIC GAAS LN 16QFN RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC903LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GAAS LN 16QFN |
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