参数资料
型号: HMC902LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 5000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, SMT-16
文件页数: 3/8页
文件大小: 687K
代理商: HMC902LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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s
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T
7
7 - 3
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Psat vs. Temperature [1]
Power Compression @ 7 GHz [1]
P1dB vs. Temperature [1]
Reverse Isolation vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 7 GHz [1]
-4
0
4
8
12
16
20
24
-21
-18
-15
-12
-9
-6
-3
0
3
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
3
3.5
4
GAIN
(dB),
P1dB
(dBm)
NOISE
FIGURE
(dB)
Vdd (V)
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
Gain
IP3
Idd
G
A
IN
(d
B
),
IP
3
(d
B
m
)
Idd
(mA)
Vgg1, Vgg2 Gate Volltage (Vdc)
-60
-50
-40
-30
-20
-10
0
4
5
6
7
8
9
10
11
+25C
+85C
-40C
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
0
5
10
15
20
25
4
5
6
7
8
9
10
11
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
4
5
6
7
8
9
10
11
+25C
+85C
-40C
P1dB
(dBm)
FREQUENCY (GHz)
Gain, Output IP3 & Idd vs. Gate
Voltage @ 7 GHz [2][3]
[1] Board loss removed from gain, power and noise figure measurement.
[2] Board loss removed from gain measurement
[3] Data taken at Vdd1 = Vdd2 = 3V
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