- 您现在的位置：买卖IC网 > Datasheet目录40 > HMC920LP5E (Hittite Microwave Corporation)IC CTRLR ACTIVE BIAS 32QFN Datasheet资料下载
参数资料
| 型号： | HMC920LP5E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 2/26页 |
| 文件大小： | 1291K |
| 描述： | IC CTRLR ACTIVE BIAS 32QFN |
| 标准包装： | 1 |
| 功能： | 有源偏压控制器 |
| 输入电压： | 5 V ~ 16.5 V |
| 电流 - 输出： | 500mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-VFQFN 裸露焊盘 |
| 供应商设备封装： | 32-QFN（5x5） |
| 包装： | 标准包装 |
| 其它名称： | 1127-1077-6 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 2
13
HMC920LP5E
v07.1013
ACTIVE BIAS CONTROLLER
HMC920LP5E is an active bias controller which generates a regulated Drain voltage and actively adjusts the gate
voltage of an external amplifier to achieve constant bias current. It can be used to bias any enhancement and depletion
type amplifiers operating in Class-A regime with Drain voltages (VDRAIN) from 3V to 15V and drain currents (IDRAIN)
up to 500mA, offering a complete biasing solution.
HMC920LP5E achieves excellent bias stability over supply, temperature and process variations, and eliminates the
required calibration procedures used to prevent RF performance degradation due to such variations.
The HMC920LP5E is housed in an RoHS compliant 5x5 mm QFN leadless package with an exposed backside pad
to improve thermal characteristics.
General Description
Electrical Specifications, T
A
= +25癈, Vdd = Vdd1 = Vdd2 = 15V
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Supply Voltage
Vdd
5
16.5
V
Quiescent Current
IDD
Vdd = 5V
EN = Vdig
35
mA
EN = GND
20
mA
Vdd = 15V
EN = Vdig
35
mA
EN = GND
20
mA
Negative Voltage Output
VNEG
-2.5
V
Oscillator Frequency
FOSC
250
kHz
Bandgap Reference
VBGC
2
V
VDIG Feedback
VDIGFB
2.5
V
LDOCC Feedback
LDOFB
2
V
Enable Input Threshold
ENTHRS
Vinlow
1
V
Vinhigh
1.4
V
ALMTRIG Input Threshold
ALMTRIG
Vinlow
1
V
Vinhigh
1.4
V
Low Vdd Alarm Threshold
VddCHK
3.8
V
VDRAIN Characteristics
DRAIN Current Adjustment Range
IDRAIN
0
500
mA
DRAIN Current Change Over Supply Voltage
擨DRAINV
VDRAIN set to 6V,
IDRAIN set to 100mA,
0.05
%/V
DRAIN Current Change Over Temperature
0.03
%/C
DRAIN Adjustment Range
VDRAIN
3
15
V
VDRAIN Change Over Supply Voltage
擵DRAIN
VDRAIN set to 6V,
IDRAIN set to 100mA,
0.05
%/V
VDRAIN Change Over Temperature
0.008
%/C
VNEG Characteristics
Negative Voltage Output
VNEG
-2.5
V
VNEG Current Sink
INEG
0
60
mA
VGATE Characteristics
GATE Current Supply
IG
-4
4
mA
VGATE Low Level
VG_MIN
VNEG
V
VGATE High Level
VG_MAX
VNEG+4.5
V
VDIG Characteristics
Adjustment Range
VDIG
3.5
5
V
VDIG Current Source
IDIG
30
mA
相关PDF资料 |
PDF描述 |
|---|---|
| IDTTSE2002B3CNRG | IC TEMP SENS EEPROM DFN-8 |
| IPM6220ACAZ-T | IC REG 5OUT BUCK/LDO SYNC 24SSOP |
| IR2170 | IC CURRENT SENSE 600V 1MA 8-DIP |
| IR2171STR | IC CURRENT SENSE 8SOIC |
| IR2172S | IC CURRENT SENSE 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC920LP5ETR | 制造商:Hittite Microwave Corp 功能描述:IC CTRLR ACTIVE BIAS 32QFN |
| HMC921LP4E | 功能描述:IC AMP MMIC GASS 24QFN RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC921LP4ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC GASS 24QFN |
| HMC922LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC SWITCH SPDT DIFF 24-QFN |
| HMC922LP4ETR | 制造商:Hittite Microwave Corp 功能描述:HMC922 Series DC - 4.0 GHz Non-Reflective Differential SPDT Switch - QFN-24 |
发布紧急采购，3分钟左右您将得到回复。