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参数资料
| 型号： | HMC950 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.45 X 3.23 MM, 0.10 MM HEIGHT, DIE-12 |
| 文件页数： | 1/10页 |
| 文件大小： | 524K |
| 代理商： | HMC950 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v03.0611
General Description
Features
Functional Diagram
The hmC950 is a four stage GaAs phemT mmiC
4 watt power Amplifier which operates between 12
and 16 Ghz. The hmC950 provides 28 dB of gain,
+37 dBm of saturated output power, and 23% pAe
from a +7V power supply. The hmC950 exhibits
excellent linearity and is optimized for high capacity
point to point and point to multi-point radio systems.
it is also ideal for 13.75 to 14.5 Ghz Ku Band VsAT
transmitters as well as sATCom applications. The
amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a
50 ohm test fixture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
saturated output power: +37 dBm @ 23% pAe
high output ip3: +44.5 dBm
high Gain: 28 dB
DC supply: +7V @ 2400 mA
no external matching required
Die size: 3.23 x 3.45 x 0.1 mm
Electrical Specifications, T
A = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1]
Typical Applications
The hmC950 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT & SATCOM
Military & Space
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
12 - 13
13 - 16
Ghz
Gain
26
28
26
28
dB
Gain Variation over Temperature
0.056
dB/ °C
input return loss
17
16
dB
output return loss
17
dB
output power for 1 dB Compression (p1dB)
34.5
36.5
34.5
36.5
dBm
saturated output power (psat)
37
dBm
output Third order intercept (ip3)[2]
43
44.5
dBm
Total supply Current (idd)
2400
mA
[1] Adjust Vgg between -2 to 0V to achieve idd = 2400 mA typical.
[2] measurement taken at +7V @ 2400 mA, pout / Tone = +24 dBm
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC950_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz |
| HMC951BLP4E | 功能描述:RF IC Downconverter Radar 5.6GHz ~ 8.6GHz 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 功能:降频器 频率:5.6GHz ~ 8.6GHz RF 类型:雷达 辅助属性:- 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
| HMC951BLP4ETR | 功能描述:IC MMIC IQ DOWNCONVERTER 24-QFN 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:在售 功能:降频器 频率:5.6GHz ~ 8.6GHz RF 类型:雷达 辅助属性:- 封装/外壳:24-VFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
| HMC951LP4E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC IQ DOWNCONVERTER 24-QFN |
| HMC951LP4E_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q DOWNCONVERTER 5.6 - 8.6 GHz |
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