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参数资料
| 型号： | HMC969 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 40000 MHz - 43500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.77 X 2.32 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 6/10页 |
| 文件大小： | 676K |
| 代理商： | HMC969 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7V
rf input power (rfin)
+20 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 15.5 mw/°C above 85 °C)
6.45 w
Thermal resistance
(channel to die bottom)
10.1 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-55 to +85 °C
Vdd (V)
idd (mA)
+5.0
900
+5.5
900
+6.0
900
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 900 mA
Typical Supply Current vs. Vdd
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
Power Dissipation
Gain & Power vs.
Supply Current @ 41 GHz
Gain & Power vs.
Supply Voltage @ 41 GHz
Reverse isolation vs. Temperature
-60
-50
-40
-30
-20
-10
0
36
37
38
39
40
41
+25C
+85C
-55C
FREQUENCY (GHz)
IS
O
LA
T
IO
N
(d
B
)
15
20
25
30
35
40
5
5.5
6
Gain
P1dB
Psat
Vdd (V)
Gain
(dB),
P1dB
(dBm),
Psat
(dBm)
15
20
25
30
35
40
800
900
1000
Gain
P1dB
Psat
Idd (mA)
Gain
(dB),
P1dB
(dBm),
Psat
(dBm)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13
40GHz
41GHz
42GHz
43GHz
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(W
)
INPUT POWER (dBm)
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