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参数资料
| 型号： | HMC998 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 100 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.99 X 1.84 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 565K |
| 代理商： | HMC998 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC998
v00.0611
GaAs PHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Functional Diagram
Features
high p1dB output power: +31 dBm
high psat output power: +33 dBm
high Gain: 12 dB
high output ip3: +41 dBm
supply Voltage: Vdd = +10V to +15 V @ 500 mA
50 ohm matched input/output
Die size: 2.99 x 1.84 x 0.1 mm
Typical Applications
The hmC998 is ideal for:
Test Instrumentation
Microwave Radio & VSAT
Military & Space
Telecom Infrastructure
Fiber Optics
General Description
The hmC998 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 Ghz. The amplifier provides 12 dB of gain,
41 dBm output ip3 and +31 dBm of output power at
1 dB gain compression while requiring 500mA from
a +15V supply. This versatile PA exhibits a positive
gain slope from 1 to 18 Ghz making it ideal for ew,
eCm, radar and test equipment applications. The
hmC998 amplifier i/os are internally matched to
50 ohms facilitating integration into mutli-Chip-
modules (mCms). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications, T
A = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA*
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
0.1 - 2
2 - 18
18 - 22
Ghz
Gain
9.5
11.5
10.5
12.5
10.5
12.5
dB
Gain flatness
±0.1
±0.7
±0.6
dB
Gain Variation over Temperature
0.006
0.11
0.016
dB/ °C
input return loss
-20
-15
dB
output return loss
-7
-20
dB
output power for 1 dB Compression (p1dB)
29
31
29
31.5
27
30
dBm
saturated output power (psat)
33
33.5
33
dBm
output Third order intercept (ip3)
41
40
dBm
noise figure
10
4
5
dB
supply Current
(idd) (Vdd= 15V, Vgg1= -0.7V Typ.)
500
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical.
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