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参数资料
| 型号： | HMC998 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 100 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.99 X 1.84 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 6/10页 |
| 文件大小： | 565K |
| 代理商： | HMC998 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC998
v00.0611
GaAs PHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+12 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V)
rf input power (rfin)
+27 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
4.5 w
Thermal resistance
(channel to die bottom)
14.5 °C/w
output power into Vswr >7:1
+32 dBm
storage Temperature
-65 to 150°C
operating Temperature
-55 to 85 °C
Vdd (V)
idd (mA)
+12
500
+14
500
+15
500
Typical Supply Current vs. Vdd
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
Second Harmonics vs. Pout
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
Second Harmonics vs.
Vdd @ Pout = 18 dBm
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+12V
+14V
+15V
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
Reverse Isolation vs Temperature
-80
-70
-60
-50
-40
-30
-20
-10
0
4
8
12
16
20
24
+25C
+85C
-55C
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
Vgg1 adjust to achieve Vdd = 500 mA
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