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参数资料
| 型号： | HMD4M32M2VEG-5 |
| 厂商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| 中文描述： | 16Mbyte（4Mx32）DRAM的上海药物研究所江户模式，4K的刷新，3.3 |
| 文件页数： | 4/6页 |
| 文件大小： | 63K |
| 代理商： | HMD4M32M2VEG-5 |
HANBit HMD4M32M2VE
URL:www.hbe.co.kr
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
I
CC3
: /RAS Only Refresh Current * (/CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
I
CC4
: Fast Page Mode Current * (/RAS=V
IL
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
* NOTE: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( T
A
=25
o
C, Vcc = 3.3V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
C
IN1
-
10
pF
Input Capacitance (/W)
C
IN2
-
14
pF
Input Capacitance (/RAS0, /RAS1)
C
IN3
-
14
pF
Input Capacitance (/CAS0-/CAS3)
C
IN4
-
14
pF
Input/Output Capacitance (DQ0-31)
C
DQ1
-
14
pF
AC CHARACTERISTICS
( 0
o
C
≤
T
A
≤
70oC , Vcc = 3.3V
±
10%, See notes 1,2.)
-5
-6
STANDARD OPERATION
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Random read or write cycle time
t
RC
84
104
ns
Access time from /RAS
t
RAC
50
60
ns
Access time from /CAS
t
CAC
13
15
ns
Access time from column address
t
AA
25
30
ns
/CAS to output in Low-Z
t
CLZ
3
3
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
/RAS precharge time
t
RP
30
40
ns
/RAS pulse width
t
RAS
50
10K
60
10K
ns
/RAS hold time
t
RSH
13
15
ns
/CAS hold time
t
CSH
38
45
ns
/CAS pulse width
t
CAS
8
10K
10
10K
ns
/RAS to /CAS delay time
t
RCD
20
37
20
45
ns
/RAS to column address delay time
t
RAD
15
25
15
30
ns
/CAS to /RAS precharge time
t
CRP
5
5
ns
Row address set-up time
t
ASR
0
0
ns
Row address hold time
t
RAH
10
10
ns
Column address set-up time
t
ASC
0
0
ns
相关PDF资料 |
PDF描述 |
|---|---|
| HMD4M32M2VEG-6 | 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| HMD4M32M8AG-5 | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8AG-6 | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8G | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMD4M32M2VEG-6 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| HMD4M32M8AG | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V |
| HMD4M32M8AG-5 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8AG-6 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8EAG-5 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V |
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