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参数资料
| 型号： | HMD4M32M2VEG-5 |
| 厂商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| 中文描述： | 16Mbyte（4Mx32）DRAM的上海药物研究所江户模式，4K的刷新，3.3 |
| 文件页数： | 5/6页 |
| 文件大小： | 63K |
| 代理商： | HMD4M32M2VEG-5 |
HANBit HMD4M32M2VE
URL:www.hbe.co.kr
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
Column address hold time
t
CAH
8
10
ns
Column Address to /RAS lead time
t
RAL
25
30
ns
Read command set-up time
t
RCS
0
0
ns
Read command hold referenced to /CAS
t
RCH
0
0
ns
Read command hold referenced to /RAS
t
RRH
0
0
ns
Write command hold time
t
WCH
10
10
ns
Write command pulse width
t
WP
10
10
ns
Write command to /RAS lead time
t
RWL
10
10
ns
Write command to /CAS lead time
t
CWL
8
10
ns
Data-in set-up time
t
DS
0
0
ns
Data-in hold time
t
DH
8
10
ns
Refresh period
t
REF
64
64
ns
Write command set-up time
t
WCS
0
0
ns
/CAS setup time (C-B-R refresh)
t
CSR
5
5
ns
/CAS hold time (C-B-R refresh)
t
CHR
10
10
ns
/RAS precharge to /CAS hold time
t
RPC
5
5
ns
Access time from /CAS precharge
t
CPA
35
40
ns
Fast page mode cycle time
t
PC
28
35
ns
/CAS precharge time (Fast page)
t
CP
8
10
ns
/RAS pulse width (Fast page )
t
RASP
50
100K
60
100K
ns
/W to /RAS precharge time (C-B-R refresh)
t
WRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
t
WRH
10
10
ns
NOTES
1.
An initial pause of 200
μ
s is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.
V
IH (min)
and V
IL (max)
are reference levels for measuring timing of input signals. Transition times are measured between
V
IH(min)
and V
IL(max)
and are assumed to be 5ns for all inputs.
3.
Measured with a load equivalent to 1TTL loads and 100pF
4.
Operation within the t
limit insures that t
can be met. t
is specified as a reference point only. If t
RCD
is greater than the specified t
RCD(max)
limit, then access time is controlled exclusively by t
CAC
.
5.
Assumes that t
≥
t
6. t
AR
, t
WCR
, t
DHR
are referenced to t
RAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V
OH
or V
OL
.
8. t
WCS
, t
RWD
, t
CWD
and t
AWD
are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If t
WCS
≥
tWCS(min)
the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either t
or t
must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in read-
write cycles.
11. Operation within the t
RAD(max)
limit insures that t
RAC(max)
can be met. t
RAD(max)
is specified as a reference
point only. If t
RAD
is greater than the specified t
RAD(max)
limit. then access time is controlled by t
AA
.
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|---|---|
| HMD4M32M2VEG-6 | 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| HMD4M32M8AG-5 | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8AG-6 | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8G | 16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMD4M32M2VEG-6 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V |
| HMD4M32M8AG | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V |
| HMD4M32M8AG-5 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8AG-6 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) Fast Page Mode, 2K/4K Refresh 72Pin SIMM |
| HMD4M32M8EAG-5 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V |
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