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参数资料
| 型号： | HML1225 |
| 厂商： | HSMC CORP. |
| 英文描述： | 0.8A 300.380 VOLTAGE SCRS IGT<200uA |
| 中文描述： | 0.8A 300.380电压沙特遥感糖耐量低减“200uA |
| 文件页数： | 1/2页 |
| 文件大小： | 28K |
| 代理商： | HML1225 |
HI-SINCERITY
MICROELECTRONICS CORP.
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 1/2
HML1225, HXL1225
HSMC Product Specification
Description
The HML1225/HXL1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Parameter
Part No.
HXL1225
HML1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
Min
380
300
0.8
0.5
Max
-
-
-
-
Unit
V
V
A
A
Test Conditions
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate
Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Tj=40
°
C to 125
°
C (RGK=1K)
TC=40
°
C
Half Cycle=180
°
,TC=40
°
C
VGRM
8
-
V
IGR=10uA
IGM
PG(AV)
Tj
Tstg
Tsld
1
-
-
A
W
°
C
°
C
°
C
10us max
20ms max
0.1
-40
-40
-
125
125
250
1.6mm from case 10s max
Classification Of IGT
Rank
HML1225
HXL1225
AA
AB
AC
AD
B
C
-
10-18 uA
10-18 uA
12-23 uA
12-23 uA
17-28 uA
17-28 uA
22-55 uA
22-55 uA
45-105 uA
45-105 uA
95-155 uA
Electrical Characteristics
(Ta=25
°
C)
Parameter
Symbol Min
IDRM
IDRM
Max
0.1
5
1.4
2.2
0.95
600 Ohm
200
0.8
5
6
-
-
500
Unit
mA
uA
V
V
V
Test Conditions
Off-State Leakage Current
Off-State Leakage Current
-
-
-
-
-
-
-
-
-
-
@VDRM (RGK=1K), Tj=125
°
C
@VDRM (RGK=1K), Tj=25
°
C
at IT=0.4A, Tj=25
°
C
at IT=0.8A, Tj=25
°
C
Tj=125
°
C
Tj=125
°
C
VD=7V
VD=7V
RGK=1K(ohm)
RGK=1K(ohm)
VD=0.67*VDRM(RGK=1K), Tj=125
°
C
IG=10mA,diG/dt=0.1A/us, Tj=125
°
C
IG=10mA,diG/dt=0.1A/us
Tc=85
°
C,VD=0.67*VDRM
VR=35V,IT=IT(AV)
On-State Voltage
VT
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
VT(TO)
rT
IGT
VGT
IH
IL
dv/dt
di/dt
tgd
uA
V
mA
mA
V/us
A/us
ns
25
30
-
Commutated Turn-off Time
tg
-
200
us
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
R
θ
jc
R
θ
ja
100
200
-
-
K/W
K/W
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