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参数资料
| 型号： | HMMC-5023 |
| 元件分类： | 放大器 |
| 英文描述： | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.074 X 0.0236 INCH, DIE |
| 文件页数： | 1/7页 |
| 文件大小： | 102K |
| 代理商： | HMMC-5023 |
HMMC-5023
23 GHz LNA (21.2 – 26.5 GHz)
Data Sheet
Description
The HMMC-5023 MMIC is a high-gain low-noise
amplifier (LNA) that operates from 21 GHz to over 30
GHz. By eliminating the complex tuning and assem-
bly processes typically required by hybrid (discrete-
FET) amplifiers, the HMMC-5023 is a cost-effective
alternative in both 21.2–23.6 GHz and 24.5–26.5 GHz
communications receivers. The device has good input
and output match to 50 ohms and is unconditionally
stable to more than 40 GHz. The backside of the chip
is both RF and DC ground. This helps simplify the
assembly process and reduces assembly related per-
formance variations and costs. It is fabricated using
a PHEMT integrated circuit structure that provides
exceptional noise and gain performance.
Features
Frequency range:
21.2 – 23.6 GHz and
24.5 – 26.5 GHz specified.
21 – 30 GHz performance
Low noise temperature: 226 K (2.5 dB N.F.) typical
High gain: 24 dB typical
50
input/output matching
Single supply bias with optional bias adjust:
5 volts (@ 24 mA typical)
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VD1, VD2
Drain Suuply Voltage
V
3
8
V
G1, VG2
Gate Supply Voltage
V
0.4
2
I
D1
Drain Supply Current
mA
35
ID2
Drain Supply Current
mA
35
Pin
RF Input Power[2]
dBm
15
Tch
Channel Temperature[3]
°C
150
T
A
Backside Ambient Temp
°C
-55
+140
Tst
Storage Temp
°C
-65
+165
Tmax
Max. Assembly Temp
°C
300
Notes:
1. Absolute maximum ratings for continuous operation
unless otherwise noted.
2. Operating at this power level for extended (continuous) periods is
not recommended.
3. Refer to DC Specifications/Physical Properties table for de-rating
information.
Chip Size:
1880 x 600
m (74 x 23.6 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127
± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
80 x 80
m (3.1 x 3.1 mils), or larger
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5021 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5027 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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