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参数资料
| 型号： | HMMC-5025 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 1/8页 |
| 文件大小： | 589K |
| 代理商： | HMMC-5025 |
Agilent HMMC-5025
2-50 GHz Distributed Amplier
1GG6-8000
Data Sheet
Features
Frequency Range:
2-50 GHz
Small Signal Gain:
8.5 dB
P-1 dB @ 40 GHz: 12 dBm
Noise Figure:
5 dB @ 2-35 GHz
7 dB @ 35-50 GHz
Return Loss:
In/Out: <- 10 dB
30 dB Gain Control
Chip Size:
1720 × 920 m (67.7 × 36.2 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127 ±15 m (5.0 ±0.6 mils)
Pad Dimensions:
80 × 80 m (3.2 × 3.2 mils)
Absolute Maximum Ratings1
Symbol
Parameters/Conditions
Min.
Max.
Units
VDD
Positive Drain Voltage
7.0
volts
IDD
Total Drain Current
170
mA
VG1
First Gate Voltage
-3.5
0
volts
VG2
Second Gate Voltage
-3.0
+3.0
volts
PDC Power
DC Power Dissipation
1.2
watts
Pin
CW Input Power
20
dBm
Tch
Operating Channel Temperature
150
°C
Tcase
Operating Case Temperature
-55
°C
Tstg
Storage Temperature
-65
165
°C
Tmax
Maximum Assembly Temperature
300
°C
(for 60 seconds maximum)
1 Operation in excess of any one of these conditions may result in permanent damage to this device.
TA = 25°C except for Tch, Tstg, and Tmax.
Description
The HMMC-5025 was designed as a
generic wide band distributed ampli-
er, covering the frequency span 2-50
GHz. It consists of seven stages. Each
stage is made up of two cascoded
FETs with gate peripheries of 48 m
per FET. Both input and output
ports were designed to provide 50
Ohm terminations. Bonding pads are
provided in the layout to allow ampli-
er operation at frequencies lower than
2 GHz by means of external circuit
components.
The amplier is biased with a
single positive drain supply (VDD) and
a single negative gate supply (VG1). A
second gate connection is provided for
external gain control applications.
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