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参数资料
| 型号： | HMMC-5025 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 5/8页 |
| 文件大小： | 589K |
| 代理商： | HMMC-5025 |
5
Drain bias must be decoupled from
RF to lowest operating frequency.
(AN #56).
Gate is decoupled from RF,
(Bond wire length not important)
100 pF
4 ηH inductor for
operation to 2 GHz
(200 mil bond wire).
Figure 3. Assemby Diagram
Figure 4. Typical Gain and Reverse Isolation vs. Frequency
Figure 5. Typical Input and Output Return Loss vs. Frequency
VDD = 5.0 V, IDD = 75 mA
(1)
Small
–
Signal
Gain
(dB)
Frequency (GHz)
Reverse
Isolation
(dB)
12
10
8
6
4
2
10
20
30
40
50
60
2
6
10
14
18
22
26
30
34
38
42
46 50
Gain
Isolation
VDD = 5.0 V, IDD = 75 mA
(1)
Input
Return
Loss
(dB)
Frequency (GHz)
Output
Return
Loss
(dB)
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
2
6
10
14
18
22
26
30
34
38
42
46 50
Output
Input
1 Data obtained from on-wafer measurements. T
chuck = 25C.
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