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参数资料
| 型号： | HMMC-5025 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 3/8页 |
| 文件大小： | 589K |
| 代理商： | HMMC-5025 |
3
Low Frequency
Extension
Drain
Bias
Aux Drain
RF Input
GND
Gate
Bias
Low Frequency
Extension
Second Gate
Bias
Aux Gate
RF Output
8.5
50
6
9.2
350
Seven Similar Stages
15
8.5
470
340
1.5
50
Applications
The HMMC-5025 traveling wave
amplier is designed for use as a
general purpose wideband power
stage in communication systems,
and microwave instrumentation, and
optical systems. It is ideally suited
for broadband applications requiring a
at gain response and excellent port
matches over a 2 to 50 GHz frequency
range. Dynamic gain control and low-
frequency extension capabilities are
designed into these devices.
It is characteristic of traveling wave
ampliers that S22 tends to 0 dB and
greater out of band. This is the design
trade-off for the broadband perfor-
mance of TWAs. As a consequence,
TWAs are not necessarily uncondition-
ally stable out of band. This means
that if a TWA is followed by a reective
low-pass lter, oscillations can occur.
This phenomenon is exacerbated by
low temperature where the gain is
higher. More data will
follow on individual devices.
Biasing and Operation
The recommended bias conditions for
best performance for
the HMMC-5025 are VDD = 5.0 V,
IDD = 75 mA. To achieve these drain
current levels, VG1 is typically biased
between -0.2 V and
-0.6 V. No other bias supplies or con-
nections to the device are
required for 2 to 50 GHz operation. The
gate voltage (VG1) should
be applied prior to the drain voltage
(VDD) during power up and removed
after the drain voltage during power
down.
The HMMC-5025 is a DC coupled
amplier. External coupling capacitors
are needed on RFIN and RFOUT ports.
The drain bias pad is connected to RF
and must be decoupled to the lowest
operating frequency.
The auxiliary gate and drain
contacts are provided when
performance below 1 GHz is
required. Connect external capacitors
to ground to maintain
input and output VSWR at low fre-
quencies (see Additional
References). Do not apply bias
to these pads.
The second gate (VG2) can be used to
obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is required
on this contact.
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must be
employed in all aspects of storage,
handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and bonding
methods are critical factors in suc-
cessful GaAs MMIC performance and
reliability.
Agilent application note #54, “GaAs
MMIC ESD, Die Attach and Bonding
Guidelines” provides basic information
on these subjects.
Additional References:
AN #56, “GaAs MMIC TWA
Users Guide.”
Figure 1. Schematic
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5021 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5027 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5032 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
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| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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