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参数资料
| 型号： | HMMC-5040 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0677 X 0.0299 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 3/8页 |
| 文件大小： | 650K |
| 代理商： | HMMC-5040 |
3
Applications
The HMMC-5040 broadband
amplifier is designed for both military
(35 GHz) applications and wireless
communication systems that operate
at 23, 28, and 38 GHz. It is also suitable
for use as a frequency multiplier due to
excellent below-band input return loss
and high gain.
Biasing and operation
The recommended DC bias condition
is with all drains connected to single
4.5 volt supply and all gates connected
to an adjustable negative voltage
supply as shown in Figure 12. The
gate voltage is adjusted for a total
drain supply current of typically up to
300 mA. Figures 4, 5, 8, and 9 can be
used to help estimate the minimum
drain voltage and current necessary for
a given RF gain and output power.
The second, third, and fourth stage DC
drain bias lines are connected internally
(Figure 1) and therefore require only a
single bond wire. An additional bond
wire is needed for the first stage DC
drain bias, V
D1.
Only the third and fourth stage DC gate
bias lines are connected internally. A
total of three DC gate bond wires are
required: one for V
G1, one for VG2, and
one for the V
G3-to-VG4 connection.
The RF input has matching circuitry
that creates a 50 ohm DC and RF path
to ground. A DC blocking capacitor
should be used in the RF input
transmission line. Any DC voltage
applied to the RF input must be
maintained below 1 volt. The RF output
is AC-coupled.
No ground wires are needed since
ground connections are made with
plated through-holes to the backside of
the device.
The HMMC-5040 can also be used
to double, triple, or quadruple the
frequency of input signals. Many bias
schemes may be used to generate and
amplify desired harmonics within the
device. The information given here is
intended to be used by the customer as
a starting point for such applications.
Optimum conversion efficiency is
obtained with approximately 14 dBm
input drive level.
As a doubler, the device can multiply
an input signal in the 10 to 20 GHz
frequency range up to 20 to 40 GHz
with conversion gain for output
frequencies exceeding 30 GHz.
Similarly, 5 to 10 GHz signals can be
quadrupled to 20 to 40 GHz with some
conversion loss. Frequency doubling
or quadrupling is accomplished by
operating the first gain stage at
pinch-off (V
G1 = VP =
~ 1.2 volts). Stages
2, 3, and 4 are biased for normal
amplification. The assembly diagram
shown in Figure 13 can be used.
To operate the device as a frequency
tripler the drain voltage can be reduced
to approximately 2.5 volts and the
gate voltage can be set at about
–0.4 volts or adjusted to minimize
second harmonics if needed. Either of
Figures 12 and 13 can be used.
Contact your local Agilent Technologies
sales representative for additional
information concerning multiplier
performance and operating conditions.
Assembly techniques
It is recommended that the RF input
and output connections be made using
either 500 lines/inch (or equivalent)
gold wire mesh. The RF connections
should be kept as short as possible
to minimize inductance. The DC bias
supply wires can be 0.7 mil diameter
gold.
GaAs MMICs are ESD sensitive. ESD
preventive measures must be employed
in all aspects of storage, handling, and
assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical factors in
successful GaAs MMIC performance
and reliability.
Agilent application note #54, "GaAs
MMIC ESD, Die Attach and Bonding
Guidelines" provides basic information
on these subjects.
Additional references
AN #46, "HMMC-5040 20-40 GHz
Amplifier"
AN #50, "HMMC-5040 As a 20-40 GHz
Multiplier"
PN #3, "HMMC-5040 and HMMC-5032
Demo, 20-32 GHz High Gain Medium
Power Amp."
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