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参数资料
| 型号： | HMMC-5200 |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | DIE-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 45K |
| 代理商： | HMMC-5200 |
DC – 20 GHz HBT Series-Shunt
Amplifier
Technical Data
HMMC-5200
Features
High Bandwidth, F-1dB:
21 GHz Typical
Moderate Gain:
9.5 dB
±1 dB @ 1.5 GHz
P-1dB @ 1.5 GHz:
12 dBm Typical
Low l/f Noise Corner:
<20 kHz Typical
Single Supply Operation:
>4.75 volts @ 44 mA Typ.
Low Power Dissipation:
190 mW Typ. for chip
Description
The HMMC-5200 is a DC to
20 GHz, 9.5 dB gain, feedback
amplifier designed to be used as a
cascadable gain block for a
variety of applications. The
device consists of a modified
Darlington feedback pair which
reduces the sensitivity to process
variations and provides 50 ohm
input/output port matches.
Furthermore, this amplifier is
fabricated using MWTD’s
Heterojunction Bipolar Transistor
(HBT) process which provides
excellent process uniformity,
reliability and 1/f noise perfor-
mance. The device requires a
single positive supply voltage and
generally operates Class-A for
good distortion performance.
Chip Size:
410 x 460
m (16.1 x 18.1 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127
± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
70 x 70
m (2.8 x 2.8 mils), or larger
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VCC
VCC Pad Voltage
volts
8.0
VPAD
Output Pad Voltage
volts
3.5
Pin
RF Input Power
dBm
13
TJ
Junction Temperature
°C
+150
Top
Operating Temperature
°C
-55
+85
TSTG
Storage Temperature
°C
-65
+165
Tmax
Maximum Assembly Temp.
°C
+300
Note:
1. Operation in excess of any one of these ratings may result in permanent
damage to this device. For normal operation, all combined bias and thermal
conditions should be chosen such that the maximum Junction Temperature
(TJ) is not exceeded. TA = 25°C except for Top, TSTG, and Tmax.
GND
IN
OUT
GND
VCC
GND
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