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参数资料
型号： HMMC-5200
元件分类： 放大器
英文描述： 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装： DIE-8
文件页数： 4/6页
文件大小： 45K
代理商： HMMC-5200
4
Scattering Parameters[1], (T
A = 25°C, VCC = +6 V, R OUT = 100 , Lin/out = 0.17 nH)
Freq.
S11
S12
S21
S22
GHz
dB
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
0.0
-30.4
0.030
28.9
-14.1
0.197
0.0
9.5
3.013
179.9
-28.4
0.038
-1.5
1.0
-29.5
0.033
24.9
-14.1
0.195
-2.0
9.5
2.999
171.5
-29.3
0.034
-7.049
2.0
-28.7
0.037
27.3
-14.2
0.194
-4.1
9.5
2.992
163.2
-30.8
0.029
-15.233
3.0
-27.2
0.043
33.5
-14.2
0.195
-6.2
9.5
3.009
155.0
-31.5
0.026
-23.9
4.0
-25.6
0.052
32.4
-14.1
0.195
-8.3
9.6
3.036
146.7
-33.6
0.022
-42.7
5.0
-24.8
0.058
33.3
-14.1
0.195
-10.4
9.7
3.062
138.2
-35.8
0.016
-72.8
6.0
-24.0
0.063
31.1
-14.1
0.196
-12.6
9.8
3.097
129.6
-36.6
0.015
-109.3
7.0
-23.1
0.070
27.1
-14.1
0.197
-14.7
9.9
3.135
120.9
-34.1
0.020
-143.3
8.0
-22.6
0.074
21.9
-14.0
0.197
-16.9
10.0
3.181
112.0
-30.1
0.031
-166.4
9.0
-22.5
0.074
15.7
-14.0
0.198
-19.1
10.1
3.225
102.9
-26.9
0.045
176.1
10.0
-22.3
0.076
8.55
-14.0
0.199
-21.4
10.2
3.266
93.5
-24.4
0.060
164.4
11.0
-22.4
0.076
-0.36
-13.9
0.200
-23.6
10.3
3.298
83.9
-22.5
0.075
154.2
12.0
-22.5
0.075
-13.5
-13.9
0.201
-25.8
10.4
3.322
74.2
-20.9
0.090
147.9
13.0
-22.8
0.072
-27.9
-13.8
0.203
-28.2
10.4
3.338
64.4
-19.5
0.105
141.1
14.0
-23.2
0.069
-47.1
-13.8
0.204
-30.6
10.4
3.332
54.2
-18.3
0.121
134.2
15.0
-22.9
0.071
-69.7
-13.7
0.205
-33.1
10.3
3.306
44.0
-17.5
0.133
128.4
16.0
-22.5
0.075
-93.4
-13.6
0.207
-35.7
10.2
3.253
33.7
-16.7
0.145
122.0
17.0
-20.8
0.091
-115.1
-13.6
0.208
-37.9
10.0
3.181
23.5
-16.0
0.158
118.6
18.0
-19.2
0.109
-134.4
-13.5
0.210
-40.8
9.7
3.085
13.4
-15.5
0.167
112.3
19.0
-17.4
0.134
-149.6
-13.4
0.212
-43.8
9.4
2.975
3.5
-15.3
0.172
109.7
20.0
-15.8
0.161
-161.7
-13.4
0.213
-46.8
9.0
2.844
-6.0
-15.2
0.172
106.0
21.0
-14.4
0.190
-172.3
-13.4
0.213
-49.8
8.6
2.706
-15.4
-14.9
0.179
105.1
22.0
-13.1
0.220
178.7
-13.4
0.213
-52.9
8.1
2.560
-24.4
-14.9
0.178
104.0
23.0
-12.0
0.250
170.7
-13.4
0.212
-55.6
7.6
2.416
-33.0
-14.7
0.183
103.0
24.0
-11.0
0.281
163.3
-13.4
0.212
-58.3
7.1
2.272
-41.3
-14.5
0.187
104.9
25.0
-10.1
0.313
157.0
-13.5
0.211
-61.2
6.5
2.134
-49.2
-14.2
0.193
105.7
26.0
-9.29
0.343
150.8
-13.4
0.212
-63.9
6.0
1.997
-56.9
-13.8
0.203
106.8
Note:
1. S-parameter data obtained from on-wafer device measurement plus simulation of input and output wire bond inductance.
Figure 2. Typical S21 and S12 Response.
Figure 3. Typical S11 and S22 Response.
12
10
8
6
4
2
0
-5
-10
-15
-20
-25
S
21
(dB)
S
12
(dB)
0.10
13
26
FREQUENCY (GHz)
TA = 25°C, VCC = +6V,
ROUT = 100, Lin/out = 0.17 nH[1]
S12
S21
0
-10
-20
-30
-40
-50
0
-10
-20
-30
-40
-50
S
11
(dB)
S
22
(dB)
0.10
13
26
FREQUENCY (GHz)
TA = 25°C, VCC = +6V,
ROUT = 100, Lin/out = 0.17 nH[1]
S22
S11
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