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参数资料
| 型号： | HMMC-5200 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0181 X 0.0161 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 1/8页 |
| 文件大小： | 327K |
| 代理商： | HMMC-5200 |
Features
High bandwidth, F
–1 dB:
21 GHz typical
Moderate gain:
9.5 dB ±1 dB @ 1.5 GHz
P
–1 dB @ 1.5 GHz:
12.5 dBm typical
Low l/f noise corner:
< 20 kHz typical
Single supply operation:
> 4.75 volts @ 44 mA typical
Low power dissipation:
190 mW typical for chip
Agilent HMMC-5200
DC–20 GHz HBT Series Shunt Amplifier
1GC1-8000
Data Sheet
Chip size:
410 x 460 m (16.1 x 18.1 mils)
Chip size tolerance: ±10 m (±0.4 mils)
Chip thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad dimensions:
70 x 70 m (2.8 x 2.8 mils) or larger
Description
The HMMC-5200 is a DC to 20 GHz,
9.5 dB gain, feedback amplifier
designed to be used as a cascadable
gain block for a variety of applications.
The device consists of a modified
Darlington feedback pair which
reduces the sensitivity to process
variations and provides 50 ohm input/
output port matches. Furthermore, this
amplifier is fabricated using WPTC's
Heterojunction Bipolar Transistor (HBT)
process which provides excellent
process uniformity, reliability and 1/f
noise performance. The device requires
a single positive supply voltage and
generally operates Class-A for good
distortion performance.
Absolute maximum ratings1
Symbol
Parameters/conditions
Minimum
Maximum
Units
V
CC
VDC pad voltage
8.0
Volts
V
PAD
Output pad voltage
3.5
Volts
P
in
RF input power, continuous
+6
dBm
T
J
Junction temperature
+150
°C
T
op
Operating temperature
–55
+85
°C
T
st
Storage temperature
–65
+165
°C
T
max
Maximum assembly temperature
+300
°C
1
Operation in excess of any one of these ratings may result in permanent damage to this device. For normal
operation, all combined bias and thermal conditions should be chosen such that the maximum junction
temperature (T
J) is not exceeded. TA = 25°C except for Top, Tst, and Tmax.
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