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参数资料
| 型号： | HMMC-5220 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.0161 X 0.0181 INCH, DIE |
| 文件页数： | 1/6页 |
| 文件大小： | 136K |
| 代理商： | HMMC-5220 |
1
Agilent HMMC-5220
DC–15 GHz HBT Series–Shunt
Amplifier
Data Sheet
Absolute Maximum Ratings[1]
1. Operation in excess of any one of these ratings may result in permanent damage to this device.
For normal operation, all combined bias and thermal conditions should be chosen such that the
maximum Junction Temperature (TJ) is not exceeded. TA=25°C except for Top, Tst, and Tmax.
Symbol
Parameters/Conditions
Min.
Max.
Units
VCC
VCC Pad Voltage
8.0
Volts
VPAD
Output Pad Voltage
3.5
Volts
Pin
RF Input Power
13
dBm
TJ
Junction Temperature
+150
°C
Top
Operating Temperature
55
+85
°C
Tst
Storage Temperature
65
+165
°C
Tmax
Max. Assembly Temperature
+300
°C
Notes:
Description
The HMMC-5220 is a DC to 15
GHz, 10 dB gain, feedback am-
plifier designed to be used as a
cascadable gain block for a vari-
ety of applications. The device
consists of a modified Darling-
ton feedback pair which reduces
the sensitivity to process varia-
tions and provides 50 ohm in-
put/output port matches.
Furthermore, this amplifier is
fabricated using MWTC's Het-
erojunction Bipolar Transistor
(HBT) process which provides
excellent process uniformity, re-
liability and 1/f noise perfor-
mance. The device requires a
single positive supply voltage
and generally operates Class–A
for good distortion perfor-
mance.
Chip Size:
410 × 460 m (16.1 × 18.1 mils)
Chip Size Tolerance:
± 10 m (± 0.4 mils)
Chip Thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
70 × 70 m (2.8 × 2.8 mils), or larger
Features
High Bandwidth, F1dB:
16 GHz Typical
Moderate Gain:
10 dB ± 1 dB @ 1.5 GHz
P1dB @ 1.5 GHz: 12.5 dBm Typical
Low l/f Noise Corner:
<20 kHz Typical
Single Supply Operation:
>4.75 volts @ 44 mA Typ.
Low Power Dissipation:
190 mW Typ. for chip
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