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| 型号： | HMMC-5620 |
| 英文描述： | 6-20 GHz Wideband GaAs MMIC Amplifier(6-20 GHz宽带砷化镓单片微波集成电路放大器) |
| 中文描述： | 6-20千兆赫宽带GaAs MMIC放大器（6-20千兆赫宽带砷化镓单片微波集成电路放大器） |
| 文件页数： | 3/6页 |
| 文件大小： | 108K |
| 代理商： | HMMC-5620 |
3
HMMC-5620 Applications
The HMMC-5620 amplifier is
designed for use as a general
purpose wideband, high gain
stage in communication systems
and microwave instrumentation.
It is ideally suited for broadband
applications requiring high gain
and excellent port matches over a
6 to 20 GHz frequency range.
Both RF input and output ports
are AC-coupled on chip.
Biasing and Operation
This amplifier is biased with a
single positive drain supply (V
DD
).
The recommended bias for the
HMMC-5620 is V
DD
= 5.0 V, which
results in I
DD
= 100 mA (Typ.). No
other bias supplies or connections
to the device are required for 6 to
20 GHz operation. See Figure 3 for
assembly information.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 or 1.0 mil diameter Au
wire is recommended for D.C.
bonds. For RF bonds, MWTC
recommends low inductance
mesh interconnections for best
return loss performance. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2
°
C,
and ultrasonic power and dura-
Figure 1. HMMC-5620 Schematic.
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see Agilent application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
RF Input
GND
RF Output
MATCHING
MATCHING
MATCHING
Drain Bias
MATCHING
FENTWK
FEEDBACK
NTWK
GND
5
GND
GND
5
MATCHING
FENTWK
FENTWK
GND
GND
5
GND
GND
5
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