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参数资料
| 型号： | HMN12816D |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| 中文描述： | 非易失性SRAM模块即可移植（128K的x 16位），40pin浸，5V的 |
| 文件页数： | 5/9页 |
| 文件大小： | 143K |
| 代理商： | HMN12816D |
HANBit
HMN12816D
URL : www.hbe.co.kr 5 HANBit Electronics Co.,Ltd
Rev. 0.0 (April, 2002)
READ CYCLE
(T
A
= T
OPR
, V
CCmin
≤
V
CC
≤
V
CCmax
)
-70
-85
-120
-150
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
Read Cycle Time
t
RC
70
-
85
-
120
-
150
-
ns
Address Access Time
t
ACC
Output load A
-
70
-
85
-
120
-
150
ns
Chip enable access time
t
ACE
Output load A
-
70
-
85
-
120
-
150
ns
Output enable to Output valid
t
OE
Output load A
-
35
-
45
-
60
-
70
ns
Chip enable to output in low Z
t
CLZ
Output load B
5
-
5
-
5
-
10
-
ns
Output enable to output in low Z
t
OLZ
Output load B
5
-
0
-
0
-
5
-
ns
Chip disable to output in high Z
t
CHZ
Output load B
0
25
0
35
0
45
0
60
ns
Output disable to output high Z
t
OHZ
Output load B
0
25
0
25
0
35
0
50
ns
Output hold from address change
t
OH
Output load A
10
-
10
-
10
-
10
-
ns
WRITE CYCLE
(T
A
= T
OPR
, V
ccmin
≤
V
cc
≤
V
ccmax
)
-70
-85
-120
-150
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
Min
Max
UNI
T
Write Cycle Time
t
WC
70
-
85
-
120
-
150
-
ns
Chip enable to end of write
t
CW
Note 1
65
-
75
-
100
-
100
-
ns
Address setup time
t
AS
Note 2
0
-
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
Note 1
65
-
75
-
100
-
90
-
ns
Write pulse width
t
WP
Note 1
55
-
65
-
85
-
90
-
ns
Write recovery time (write cycle 1)
t
WR1
Note 3
5
-
5
-
5
-
5
-
ns
Write recovery time (write cycle 2)
t
WR2
Note 3
15
-
15
-
15
-
15
-
ns
Data valid to end of write
t
DW
30
-
35
-
45
-
50
-
ns
Data hold time (write cycle 1)
t
DH1
Note 4
0
-
0
-
0
-
0
-
ns
Data hold time (write cycle 2)
t
DH2
Note 4
10
-
10
-
10
-
0
-
ns
Write enabled to output in high Z
t
WZ
Note 5
0
25
0
30
0
40
0
50
ns
Output active from end of write
t
OW
Note 5
5
-
0
-
0
-
5
-
ns
NOTE:
1. A write ends at the earlier transition of /CE going high and /WE going high.
2. A write occurs during the overlap of allow /CE and a low /WE. A write begins at the later transition of /CE
going low and /WE going low.
3. Either t
WR1
or t
WR2
must be met.
4. Either t
DH1
or t
DH2
must be met.
5. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain in high-
impedance state.
相关PDF资料 |
PDF描述 |
|---|---|
| HMN12816D-120 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-120I | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-70 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150I | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMN12816D-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-120I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
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