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参数资料
| 型号： | HMN12816D |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| 中文描述： | 非易失性SRAM模块即可移植（128K的x 16位），40pin浸，5V的 |
| 文件页数： | 8/9页 |
| 文件大小： | 143K |
| 代理商： | HMN12816D |
HANBit
HMN12816D
URL : www.hbe.co.kr 8 HANBit Electronics Co.,Ltd
Rev. 0.0 (April, 2002)
POWER-DOWN/POWER-UP TIMING
(t
A
= 0
O
C to 70
O
C)
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNITS
NOTES
/CEU,/CEL at V
IH
before
Power-Down
t
PD
0
-
-
us
11
V
CC
Slew from V
TP
to 0V
t
F
300
-
-
us
-
V
CC
Slew from 0V to V
TP
t
R
300
-
-
us
-
/CEU,/CEL at V
IH
after
Power-Up
t
REC
2
-
125
us
-
(t
A
= 25
O
C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
t
DR
10
-
-
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
NOTES:
1. /WE is high for a read cycle.
2. /OE = V
IH
or V
IL
. If /OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical and of /CEU or /CEL and /WE. t
WP
is measured from the latter of /CEU, /CEL or /WE
going low to the earlier of /CEU, /CEL or /WE going high.
4. t
DS
is measured from the earlier of /CEU or /CEL or /WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the /CEU or /CEL low transition occurs simultaneously with or later than the /WE low transition in the output buffers
remain in a high impedance state during this period.
7. If the /CEU or /CEL high transition occurs prior to or simultaneously with the /WE high transition, the output buffers
remain in high impedance state during this period.
8. If /WE is low or the /WE low transition occurs prior to or simultaneously with the /CEU or /CEL low transition, the
output buffers remain in a high impedance state during this period.
9. Each HMN12816D has a built-in switch that disconnects the lithium source until V
CC
is first applied by the user.
The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time power is first applied
by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range 0_C to 70_C.
11. In a power down condition the voltage on any pin may not exceed the voltage on Vcc .
12. t
WR1
, t
DH1
are measured from /WE going high.
13. t
WR2
, t
DH2
are measured from /CEU or /CEL going high.
相关PDF资料 |
PDF描述 |
|---|---|
| HMN12816D-120 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-120I | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-70 | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150I | Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMN12816D-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-120I | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150 | 制造商:HANBIT 制造商全称:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-150I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
| HMN12816D-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
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