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参数资料
| 型号： | HN1B01FDW1T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
| 中文描述： | 200 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 52K |
| 代理商： | HN1B01FDW1T1G |
HN1B01FDW1T1
http://onsemi.com
3
Typical Electrical Characteristics: PNP Transistor
Figure 1. Collector Saturation Region
01
2
3
4
6
5
200
0
40
I C
,COLLECT
OR
CURRENT
(mA)
VCE, COLLECTOREMITTER VOLTAGE (V)
80
120
160
Figure 2. DC Current Gain
1
10
100
1000
10
h
FE
,DC
CURRENT
GAIN
IC, COLLECTOR CURRENT (mA)
100
TA = 25°C
2.0 mA
1.5 mA
1.0 mA
0.5 mA
IB = 0.2 mA
VCE = 1.0 V
TA = 100°C
25
°C
25
°C
Figure 3. DC Current Gain
1
10
1000
100
1000
10
h
FE
,DC
CURRENT
GAIN
IC, COLLECTOR CURRENT (mA)
100
Figure 4. VCE(sat) versus IC
1
10
100
1000
1
0.01
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
T
AGE
(V)
IC, COLLECTOR CURRENT (mA)
0.1
IC/IB = 10
TA = 100°C
25
°C
25
°C
TA = 100°C
25
°C
25
°C
Figure 5. VBE(sat) versus IC
1
10
1000
100
10
0.1
BASEEMITTER
SA
TURA
TION
VOL
T
AGE
(V)
IC, COLLECTOR CURRENT (mA)
1
Figure 6. BaseEmitter Voltage
0
0.1
10,000
I B
,BASE
CURRENT
(m
A)
VBE, BASEEMITTER VOLTAGE (V)
0.1
COMMON EMITTER
VCE = 6 V
TA = 100°C
25
°C
25
°C
TA = 25°C
IC/IB = 10
1
10
100
1000
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VCE = 6.0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HN1B01FGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B01FU(GRTE85LF | 制造商:Toshiba America Electronic Components 功能描述:NPN TRANSISTOR, UB, LAW - Bulk |
| HN1B01FU_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
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