- 您现在的位置：买卖IC网 > PDF目录175387 > HN1B01FDW1T1G (ON SEMICONDUCTOR) Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount PDF资料下载
参数资料
| 型号： | HN1B01FDW1T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
| 中文描述： | 200 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 52K |
| 代理商： | HN1B01FDW1T1G |
HN1B01FDW1T1
http://onsemi.com
5
PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE K
23
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A 0.1142 0.1220
2.90
3.10
B 0.0512 0.0669
1.30
1.70
C 0.0354 0.0433
0.90
1.10
D 0.0098 0.0197
0.25
0.50
G 0.0335 0.0413
0.85
1.05
H 0.0005 0.0040
0.013
0.100
J 0.0040 0.0102
0.10
0.26
K 0.0079 0.0236
0.20
0.60
L 0.0493 0.0649
1.25
1.65
M
0
10
0
10
S 0.0985 0.1181
2.50
3.00
__
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03 OBSOLETE. NEW
STANDARD 318F04.
M
J
K
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
mm
inches
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
相关PDF资料 |
PDF描述 |
|---|---|
| HN1C01FGRTE85R | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| HN1C01FUGRTE85R | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| HN2D02FUTW1T1G | Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| HN2D02FUTW1T1 | Ultra High Speed Switching Diodes(超高速开关二极管) |
| HN3C10FE | RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HN1B01FGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B01FU(GRTE85LF | 制造商:Toshiba America Electronic Components 功能描述:NPN TRANSISTOR, UB, LAW - Bulk |
| HN1B01FU_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
发布紧急采购，3分钟左右您将得到回复。