- 您现在的位置：买卖IC网 > PDF目录175387 > HN2D02FUTW1T1G (ON SEMICONDUCTOR) Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 PDF资料下载
参数资料
| 型号： | HN2D02FUTW1T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| 中文描述： | 0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, 6 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 124K |
| 代理商： | HN2D02FUTW1T1G |
HN2D02FUTW1T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 30 V
0.1
mAdc
VR = 80 V
0.5
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100 mA
80
Vdc
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
Reverse Recovery Time (Figure 1)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
3.0
ns
2. trr Test Circuit
A
RL
tr
tp
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
IF
trr
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Figure 1. Reverse Recovery Time Equivalent Test Circuit
I R
,REVERSE
CURRENT
(A)
μ
100
0.2
0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
,DIODE
CAP
ACIT
ANCE
(pF)
24
6
8
I F
,FOR
W
ARD
CURRENT
(mA)
TA = 25°C
TA = -40°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
相关PDF资料 |
PDF描述 |
|---|---|
| HN2D02FUTW1T1 | Ultra High Speed Switching Diodes(超高速开关二极管) |
| HN3C10FE | RF SMALL SIGNAL TRANSISTOR |
| HN4C05JU-A | 400 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| HN62438NP-15 | 1M X 8 MASK PROM, 150 ns, PDIP42 |
| HNA005-09T | SIP5, IC SOCKET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HN2D03F | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Application |
| HN2D03F(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 100MA SM6 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=400V,Io=0.1A,SM6 |
| HN2E01F | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E01F_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E02F | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Super High Speed Switching Application |
发布紧急采购，3分钟左右您将得到回复。