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参数资料
| 型号： | HSMS-281E-TR2 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 134K |
| 代理商： | HSMS-281E-TR2 |
2
Electrical Specifications T
C = 25°C, Single Diode
[3]
Maximum
Minimum
Maximum
Forward
Reverse
Typical
Part
Package
Breakdown
Forward
Voltage
Leakage
Maximum
Dynamic
Number
Marking
Lead
Voltage
V
F (V) @
I
R (nA) @
Capacitance Resistance
HSMS[4]
Code
Configuration
V
BR (V)
V
F (mV)
I
F (mA)
V
R (V)
C
T (pF)
R
D (
)[5]
2810
B0
0
Single
20
410
1.0
35
200
15
1.2
15
2812
B2
2
Series
2813
B3
3
Common Anode
2814
B4
4
Common Cathode
2815
B5
5
Unconnected Pair
2817
B7
7
Ring Quad
[4]
2818
B8
8
Bridge Quad
[4]
281B
B0
B
Single
281C
B2
C
Series
281E
B3
E
Common Anode
281F
B4
F
Common Cathode
281K
BK
K
High Isolation
Unconnected Pair
281L
BL
L
Unconnected Trio
Test Conditions
I
R = 10 AIF = 1 mA
V
F = 0 V
I
F = 5 mA
f = 1 MHz
Notes:
1.
V
F for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
TO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (
τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R
D = RS + 5.2 at 25°C and I f = 5 mA.
Absolute Maximum Ratings[1] T
C = 25°C
Symbol
Parameter
Unit
SOT-23/SOT-143
SOT-323/ SOT-363
If
Forward Current (1
s Pulse)
Amp
1
PIV
Peak Inverse Voltage
V
Same as V
BR
Same as V
BR
Tj
Junction Temperature
°C
150
Tstg
Storage Temperature
°C
-65 to 150
θ
jc
Thermal Resistance[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS-281E-TR2G | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| HSMS-281F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:low 1/f noise general purpose Schottky diode |
| HSMS-281F-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
| HSMS-281F-BLKG | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| HSMS-281F-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
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