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参数资料
| 型号： | HTIP125 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 34K |
| 代理商： | HTIP125 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP125
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6730-B
Issued Date : 1997.08.13
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
The HTIP125 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 65 W
Total Power Dissipation (Ta=25
°
C)...................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
*BVCEO
ICEO
ICBO
IEBO
*VCE(sat1)
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-60
-60
-
-
-
-
-
-
1000
1000
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-0.5
-0.2
-2
-2
-4
-2.5
-
-
300
Unit
V
V
mA
mA
mA
V
V
V
Test Conditions
IC=-1mA, IE=0
IC=-100mA, IB=0
VCE=-30V, IE=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-12mA
IC=-5A, IB=-20mA
IC=-3A, VCE=-3V
IC=-0.5A, VCE=-3V
IC=-3A, VCE=-3V
VCB=-10V, f=0.1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
FP
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