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参数资料
| 型号： | HTL194 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 35K |
| 代理商： | HTL194 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTL194
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6549-B
Issued Date : 1993.04.12
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HTL194 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage.................................................................................. -400 V
IC Collector Current...................................................................................................... -300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-400
-400
-
-
-
-
-
-
50
50
40
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-10
-1
-0.2
-200
-1.2
-900
-
300
-
-
30
Unit
V
V
uA
uA
uA
mV
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
VCB=-400V, IE=0
VCE=-200V, IE=0
VEB=-6V, IC=0
IC=-20mA, IB=-2mA
IC=-80mA, IB=-4mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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