参数资料
型号: HTL294I
厂商: HSMC CORP.
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 进步党外延平面晶体管
文件页数: 1/3页
文件大小: 31K
代理商: HTL294I
HI-SINCERITY
MICROELECTRONICS CORP.
HTL294I
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.23
Page No. : 1/3
HTL294I
HSMC Product Specification
Description
The HTL294I is designed for application that requires high voltage.
Features
High Breakdown Voltage: 400(Min.) at IC=1mA
High Current: IC=300mA at 25
°
C
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage.................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -250 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
ft
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
50
60
50
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-0.2
-300
-500
-750
-
250
-
-
30
Unit
V
V
V
uA
uA
uA
mV
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
VCE=-400V, IC=0
VEB=-6V, VBE=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
MHz
pF
相关PDF资料
PDF描述
HTL294J PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MD PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MI PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MJ PNP EPITAXIAL PLANAR TRANSISTOR
HTL295D PNP EPITAXIAL PLANAR TRANSISTOR
相关代理商/技术参数
参数描述
HTL294J 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MD 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MI 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MJ 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MT 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP-400V-0.8A#1.5W|Bipolar Transistors