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参数资料
| 型号： | HTL294MJ |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 34K |
| 代理商： | HTL294MJ |
HI-SINCERITY
MICROELECTRONICS CORP.
HTL294MD
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 1/3
HTL294MD
HSMC Product Specification
Description
The HTL294MD is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................... 1.5 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage.................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current...................................................................................................... -400 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
60
50
30
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-0.2
-200
-300
-1.2
-750
-
250
-
-
30
Unit
V
V
V
uA
uA
uA
mV
mV
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=10uA
VCB=-400V, IE=0
VCE=-400V, IE=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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相关代理商/技术参数 |
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| HTL294MT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP-400V-0.8A#1.5W|Bipolar Transistors |
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| HTL295D | 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HTL295I | 制造商:HSMC 制造商全称:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HTL295J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP-500V-0.3A#1.5W|Bipolar Transistors |
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