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参数资料
| 型号： | HTL294MJ |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 34K |
| 代理商： | HTL294MJ |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 2/3
HTL294MD
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
0.1
1
10
100
1000
Collector Current-IC (mA)
h
hFE @ V
CE
=10V
Sasturation Voltage & Collector Current
10
100
1000
10000
100000
1
10
100
1000
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
Collector Current-I
C
(mA)
100
1000
S
V
BE(sat)
@ I
C
=10I
B
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
C
Cob
Safe Operating Area
0.01
0.1
1
10
1
10
100
1000
Forward Biased Voltage-V
CE
(V)
C
C
PT=1mS
PT=100mS
PT=1S
Power Derating
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
50
Ta(
o
C) , Ambient Temperature
100
150
200
P
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